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Features

? Maximum junction temperature: TJ = 175 °C

? 5 μs of short-circuit withstand time

? VCE(sat) = 2.1 V (typ.) @ IC = 75 A

? Tight parameter distribution

? Positive VCE(sat) temperature coefficient

? Low thermal resistance

? Very fast recovery antiparallel diode

Description

This device is IGBT developed using an advanced proprietary trench gate fieldstop

structure. This device is part of the H series of IGBTs, which represent

an optimum compromise between conduction and switching losses to maximize

the efficiency of high switching frequency converters. Moreover, a slightly positive

VCE(sat) temperature coefficient and very tight parameter distribution result in safer

paralleling operation.

Applications

? UPS

? Solar inverters

? Welding

? PFC