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DESCRIPTION

This Power Mosfet is the latest development of STMicroelectronics unique ” Single Feature Size? ” strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalance characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.

■ TYPICAL RDS(on) = 0.06 ?

■ EXCEPTIONAL dv/dt CAPABILITY

■ 100 AVALANCHE TESTED

■ LOW GATE CHARGE 100 °C

■ APPLICATION ORIENTED CHARACTERIZATION

APPLICATIONS

■ DC MOTOR CONTROL

■ DC-DC & DC-AC CONVERTERS

■ SYNCHRONOUS RECTIFICATION