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    MICROWAVE POWER GaAs FET

    TRANSISTOR,GAAS FET INTERNALLY MATCHED,8GHZ,51W,PD 187.5W - Trays

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    FEATURES

    ?BROAD BAND INTERNALLY MATCHED FET

    ?HIGH POWER

    P1dB= 48.0dBm at 7.7GHz to 8.5GHz

    ?HIGH GAIN

    G1dB= 7.5dB at 7.7GHz to 8.5GHz

    ?LOW INTERMODULATION DISTORTION

    IM3(MIN.)= -25dBc at Pout= 41dBm (Single Carrier Level)

    ?HERMETICALLY SEALED PACKAGE

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      Toshiba America Electronic Components

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      TRANSISTOR,GAAS FET INTERNALLY MATCHED,8GHZ,51W,PD 187.5W - Trays

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    • HI-5047
    • HI-5049
    • HI-5051
    • HI-506
    • HI-506A
    • HI-507
    • HI-508A
    • HI-509A
    • HI-546
    • HI-547
    • HI-548
    • HI-549
    • HI5667
    • HI5667/6CA
    • TIM3.5-4811SM
    • TIM3.5-4812
    • TIM3.5-4812SM
    • TIM3.5-4813
    • TIM3.5-4813SM
    • TIM3.5-4815
    • TIM3.5-4815SM
    • TIM3.5-4819
    • TIM3.5-4819SM
    • TIM3.5-4822
    • TIM3.5-4822SM
    • TIM3.5-4823
    • TIM3.5-4823SM
    • TIM6472-60SL
    • TIM7179-30UL
    • TIP_V01

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    • TRANSPHORM
    • TRELECTRONIC
    • TRENZ
    • TRFASTENINGS

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