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Description

The TriQuint TGF4230-SCC is a single gate 1.2 mm Discrete GaAs Heterostructure Field Effect Transistor (HFET) designed for high-efficiency power applications up to 12 GHz in Class A and Class AB operation.

Bond-pad and backside metalization is gold plated for compatibility with eutectic alloy attach methods as well as thermocompression and thermosonic wire-bonding processes.

The TGF4230-SCC is readily assembled using automatic equipment.

For an Application Note on the use of HFETs, refer to the TriQuint website for the Millimeter Wave Division.

Key Features and Performance

? Nominal Pout of 28.5 dBm at 8.5 GHz

? Nominal Gain of 10.0 dB at 8.5 GHz

? Nominal PAE of 55 at 8.5 GHz

? 1200 ?m HFET

? 0.61 x 0.74 x 0.1 mm (0.024 x 0.029 x 0.004 in)

? Bias at 8 Volts, 96 mA

Primary Applications

? Cellular Base Stations

? High dynamic-range LNAs

? Military and Space