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Description

The TriQuint TGF4250-SCC is a single gate 4.8 mm discrete GaAs Heterostructure Field Effect Transistor (HFET) designed for high efficiency power applications up to 10.5 GHz in Class A and Class AB operation. Typical performance at 2 GHz is 34 dBm power output, 13 dB gain, and 53 PAE.

Bond pad and backside metallization is gold plated for compatibility with eutectic alloy attach methods as well as thermocompression and thermosonic wire bonding processes. The TGF4250-SCC is readily assembled using automatic equipment. For an Application Note on the use of HFETs, refer to the TriQuint website for the Millimeter Wave Division.

Key Features and Performance

? Nominal Pout of 34 dBm at 8.5 GHz

? Nominal Gain of 8.5 dB at 8.5 GHz

? Nominal PAE of 53 at 8.5 GHz

? Suitable for high reliability applications

? 4800 ?m x 0.5 ?m FET

? Chip dimensions: 0.61 x 1.37 x 0.1 mm (0.024 x 0.054 x 0.004 in)

? Bias at 8 Volts, 384 mA

Primary Applications

? Cellular Base Stations

? High-reliability space

? Military