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W631GG6KB15K中文资料
W631GG6KB15K数据手册规格书PDF详情
GENERAL DESCRIPTION
The W631GG6KB is a 1G bits DDR3 SDRAM, organized as 8,388,608 words x 8 banks x 16 bits. This device achieves high speed transfer rates up to 1866 Mb/sec/pin (DDR3-1866) for various applications. W631GG6KB is sorted into the following speed grades: -11, -12, 12I, 12A, 12K -15, 15I, 15A and 15K. The -11 speed grade is compliant to the DDR3-1866 (13-13-13) specification. The -12, 12I, 12A and 12K speed grades are compliant to the DDR3-1600 (11-11-11) specification (the 12I industrial grade which is guaranteed to support -40°C ≤ TCASE ≤ 95°C). The -15, 15I, 15A and 15K speed grades are compliant to the DDR3-1333 (9-9-9) specification (the 15I industrial grade which is guaranteed to support -40°C ≤ TCASE ≤ 95°C).
FEATURES
? Power Supply: VDD, VDDQ = 1.5V ± 0.075V
? Double Data Rate architecture: two data transfers per clock cycle
? Eight internal banks for concurrent operation
? 8 bit prefetch architecture
? CAS Latency: 6, 7, 8, 9, 10, 11 and 13
? Burst length 8 (BL8) and burst chop 4 (BC4) modes: fixed via mode register (MRS) or selectable On The-Fly (OTF)
? Programmable read burst ordering: interleaved or nibble sequential
? Bi-directional, differential data strobes (DQS and DQS#) are transmitted / received with data
? Edge-aligned with read data and center-aligned with write data
? DLL aligns DQ and DQS transitions with clock
? Differential clock inputs (CK and CK#)
? Commands entered on each positive CK edge, data and data mask are referenced to both edges of a differential data strobe pair (double data rate)
? Posted CAS with programmable additive latency (AL = 0, CL - 1 and CL - 2) for improved command, address and data bus efficiency
? Read Latency = Additive Latency plus CAS Latency (RL = AL + CL)
? Auto-precharge operation for read and write bursts
? Refresh, Self-Refresh, Auto Self-refresh (ASR) and Partial array self refresh (PASR)
? Precharged Power Down and Active Power Down
W631GG6KB15K供应商...
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
深圳市汇莱威科技有限公司 |
W631GG6KB15K |
WINBOND |
24+ |
BGA |
23000 |
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|
深圳市航润创能电子集团有限公司 |
W631GG6KB15K |
WINBOND |
21+ |
BGA |
270 |
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|
深圳市安富世纪电子有限公司 |
W631GG6KB15K |
WINBOND |
23+ |
BGA |
50000 |
全新原装正品现货,支持订货 |
|
深圳市威雅利发展有限公司 |
W631GG6KB15K |
WINBOND |
17+ |
BGA |
180 |
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|
深圳市中福国际管理有限公司 |
W631GG6KB15K |
WINBOND |
20+ |
BGA |
270 |
进口原装现货,假一赔十 |
|
深圳市科恒伟业电子有限公司 |
W631GG6KB-15K |
WINBOND |
2016+ |
BGA |
6523 |
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|
深圳市纳艾斯科技有限公司 |
W631GG6KB-15K |
WINBOND |
2020+ |
BGA |
80000 |
只做自己库存,全新原装进口正品假一赔百,可开13%增 |
|
瀚佳科技(深圳)有限公司 |
W631GG6KB-15K |
WINBOND |
24+ |
BGA |
35200 |
一级代理/放心采购 |
|
深圳市赛能新源半导体有限公司 |
W631GG6KB-15K |
WINBOND |
24+ |
FBGA |
56000 |
公司进口原装现货 批量特价支持 |
|
深圳市科雨电子有限公司 |
W631GG6KB-15TR |
WINBOND |
20+ |
BGA-96 |
2854 |
就找我吧!--邀您体验愉快问购元件! |
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W631GG6KB15K 产品相关型号
- 357099_18
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- W631GG6KB-11
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- W631GG6KB-15
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Datasheet数据表PDF页码索引
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Winbond 华邦电子股份有限公司
华邦(Winbond)成立于1987年9月,1995年正式于台湾证券交易所挂牌上市。企业总部座落于台湾中部科学园区,在中科及南科各设有一座12吋高度智能化和自动化晶圆厂。 华邦电子为专业的内存集成电路公司,从产品设计、技术研发、晶圆制造到自有品牌营销全球,致力提供全球客户全方位利基型内存解决方案服务。核心产品包含编码型闪存(Code Storage Flash Memory)、TrustME? 安全闪存、利基型内存(Specialty DRAM)及行动内存(Mobile DRAM),是台湾唯一同时具备DRAM和Flash自有开发技术的厂商。华邦运用技术自主之优势及谨慎规划的产能策略,建立极具