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BGA价格
参考价格：￥122.3147
型号：BGA0001-S 品牌：Chip Quik 备注：这里有BGA多少钱，2025年最近7天走势，今日出价，今日竞价，BGA批发/采购报价，BGA行情走势销售排行榜，BGA报价。| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
EFM32 Giant Gecko Series 1 Family EFM32GG11 Family Data Sheet ?ARMCortex-M4at72MHz ?Ultralowenergyoperation ?80μA/MHzinEnergyMode0(EM0) ?2.1μAEM2DeepSleepcurrent(RTCC runningwithstateandRAMretention) ?Octal/Quad-SPImemoryinterfacew/XIP ?SD/MMC/SDIOHostController ?10/100EthernetMACwith802.3azEEE, IEEE1588 ?D | SILABS Silicon Laboratories |  |   | |
Ultra Low Current Low Noise Amplifier for L2/L5 GNSS Applications 1Features Operationfrequencies:1164to1300MHz Ultralowcurrentconsumption:1.3mA Widesupplyvoltagerange:1.1Vto2.8V Highinsertionpowergain:20.0dB Lownoisefigure:0.80dB 2kVHBMESDprotection(inludingAIpin) Onlyoneexternalmatchingcomponentneeded | InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司 |  | | |
Ultra Low Current Low Noise Amplifier for L2/L5 GNSS Applications 1Features Operationfrequencies:1164to1300MHz Ultralowcurrentconsumption:1.3mA Widesupplyvoltagerange:1.1Vto2.8V Highinsertionpowergain:20.0dB Lownoisefigure:0.80dB 2kVHBMESDprotection(inludingAIpin) Onlyoneexternalmatchingcomponentneeded | InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司 | | | |
Silicon MMIC amplifier DESCRIPTION SiliconMMICamplifierconsistingofanNPNdoublepolysilicontransistorwithintegratedbiasingforlowvoltageapplicationsinaplastic,4-pindual-emitterSOT343Rpackage. FEATURES ?Lowcurrent,lowvoltage ?Veryhighpowergain ?Lownoisefigure ?Integratedtemperature | PhilipsNXP Semiconductors 飞利浦荷兰皇家飞利浦 |  | | |
RF Manual 16th edition Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp | nxpNXP Semiconductors 恩智浦恩智浦半导体公司 |  | | |
RF Manual 16th edition Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp | nxpNXP Semiconductors 恩智浦恩智浦半导体公司 | | | |
Silicon MMIC amplifier DESCRIPTION SiliconMMICamplifierconsistingofanNPNdoublepolysilicontransistorwithintegratedbiasingforlowvoltageapplicationsinaplastic,4-pinSOT343Rpackage. FEATURES ?Lowcurrent ?Veryhighpowergain ?Lownoisefigure ?Integratedtemperaturecompensatedbiasing ?Con | PhilipsNXP Semiconductors 飞利浦荷兰皇家飞利浦 | | | |
RF Manual 16th edition Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp | nxpNXP Semiconductors 恩智浦恩智浦半导体公司 | | | |
900 MHz high linear low noise amplifier DESCRIPTION SiliconMonoliticMicrowaveIntegratedCircuit(MMIC)amplifierconsistingofanNPNdoublepolysilicontransistorwithintegratedbiasingforlowvoltageapplicationsina6-pinSOT363plasticSMDpackage. FEATURES ?Lowcurrent,lowvoltage ?Highlinearity ?Highpowergain ? | PhilipsNXP Semiconductors 飞利浦荷兰皇家飞利浦 | | | |
RF Manual 16th edition Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp | nxpNXP Semiconductors 恩智浦恩智浦半导体公司 | | | |
1900 MHz high linear low noise amplifier DESCRIPTION SiliconMonoliticMicrowaveIntegratedCircuit(MMIC)amplifierconsistingofanNPNdoublepolysilicontransistorwithintegratedbiasingforlowvoltageapplicationsina6-pinSOT363plasticSMDpackage. FEATURES ?Lowcurrent,lowvoltage ?Highlinearity ?Highpowergain ? | PhilipsNXP Semiconductors 飞利浦荷兰皇家飞利浦 | | | |
RF Manual 16th edition Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp | nxpNXP Semiconductors 恩智浦恩智浦半导体公司 | | | |
MMIC mixer DESCRIPTION SilicondoublepolyMMICmixerina6-leadplasticSOT363package. FEATURES ?Largefrequencyrange: –Cellularband(900MHz) –PCSband(1900MHz) –WLANband(2.4GHz). ?Highisolation ?Highlinearity ?Highconversiongain. APPLICATIONS Receiversideof | PhilipsNXP Semiconductors 飞利浦荷兰皇家飞利浦 | | | |
RF Manual 16th edition Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp | nxpNXP Semiconductors 恩智浦恩智浦半导体公司 | | | |
MMIC variable gain amplifier DESCRIPTION SiliconMonoliticMicrowaveIntegratedCircuit(MMIC)2stagevariablegainamplifierindoublepolysilicontechnologyina5-pinSOT551AplasticSMDpackageforlowvoltagemediumpowerapplications. FEATURES ?Highgain ?Excellentadjacentchannelpowerrejection ?SmallSMDpa | PhilipsNXP Semiconductors 飞利浦荷兰皇家飞利浦 | | | |
MMIC variable gain amplifier DESCRIPTION SiliconMonoliticMicrowaveIntegratedCircuit(MMIC)2stagevariablegainamplifierindoublepolysilicontechnologyina6-pinSOT363SMDplasticpackageforlowvoltagemediumpowerapplications. FEATURES ?Highgain ?Excellentadjacentchannelpowerrejection ?SmallSMDpac | nxpNXP Semiconductors 恩智浦恩智浦半导体公司 | | | |
MMIC variable gain amplifier DESCRIPTION SiliconMonoliticMicrowaveIntegratedCircuit(MMIC)2stagevariablegainamplifierindoublepolysilicontechnologyina6-pinSOT363SMDplasticpackageforlowvoltagemediumpowerapplications. FEATURES ?Highgain ?Excellentadjacentchannelpowerrejection ?SmallSMDpac | nxpNXP Semiconductors 恩智浦恩智浦半导体公司 | | | |
RF Manual 16th edition Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp | nxpNXP Semiconductors 恩智浦恩智浦半导体公司 | | | |
RF Manual 16th edition Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp | nxpNXP Semiconductors 恩智浦恩智浦半导体公司 | | | |
MMIC wideband amplifier DESCRIPTION SiliconMonolithicMicrowaveIntegratedCircuit(MMIC)widebandamplifierwithinternalmatchingcircuitina6-pinSOT363SMDplasticpackage. FEATURES ?Internallymatchedto50? ?Verywidefrequencyrange(3.6GHzat3dBbandwidth) ?Flat23dBgain(DCto2.6GHzat1dBfl | PhilipsNXP Semiconductors 飞利浦荷兰皇家飞利浦 | | | |
MMIC wideband amplifier DESCRIPTION SiliconMonolithicMicrowaveIntegratedCircuit(MMIC)widebandamplifierwithinternalmatchingcircuitina6-pinSOT363SMDplasticpackage. FEATURES ?Internallymatchedto50? ?Verywidefrequencyrange ?Veryflatgain ?Unconditionallystable. APPLICA | PhilipsNXP Semiconductors 飞利浦荷兰皇家飞利浦 | | | |
RF Manual 16th edition Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp | nxpNXP Semiconductors 恩智浦恩智浦半导体公司 | | | |
MMIC wideband amplifier DESCRIPTION SiliconMonolithicMicrowaveIntegratedCircuit(MMIC)widebandamplifierwithinternalmatchingcircuitina6-pinSOT363SMDplasticpackage. FEATURES ?Internallymatchedto50? ?Widefrequencyrange(3.2GHzat3dBbandwidth) ?Flat21dBgain(DCto2.6GHzat | PhilipsNXP Semiconductors 飞利浦荷兰皇家飞利浦 | | | |
RF Manual 16th edition Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp | nxpNXP Semiconductors 恩智浦恩智浦半导体公司 | | | |
MMIC wideband amplifier Generaldescription SiliconMonoliticMicrowaveIntegratedCircuit(MMIC)widebandamplifierwithinternalmatchingcircuitina6-pinSOT363plasticSMDpackage. Features ■Internallymatchedto50? ■Widefrequencyrange(2.7GHzat3dBgainbandwidth) ■Flat21dBgain(±1dBfromDCup | PhilipsNXP Semiconductors 飞利浦荷兰皇家飞利浦 | | | |
MMIC wideband amplifier Generaldescription SiliconMonoliticMicrowaveIntegratedCircuit(MMIC)widebandamplifierwithinternalmatchingcircuitina6-pinSOT363plasticSMDpackage. Features ■Internallymatchedto50? ■Widefrequencyrange(2.7GHzat3dBgainbandwidth) ■Flat21dBgain(±1dBfromDCup | nxpNXP Semiconductors 恩智浦恩智浦半导体公司 | | | |
RF Manual 16th edition Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp | nxpNXP Semiconductors 恩智浦恩智浦半导体公司 | | | |
MMIC wideband amplifier Generaldescription SiliconMonolithicMicrowaveIntegratedCircuit(MMIC)widebandamplifierwithinternalmatchingcircuitina6-pinSOT363SMDplasticpackage. Features ■Internallymatchedto50? ■Widefrequencyrange(3.3GHzat3dBbandwidth) ■Flat22dBgain(±1dBupto2.8GHz) | PhilipsNXP Semiconductors 飞利浦荷兰皇家飞利浦 | | | |
RF Manual 16th edition Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp | nxpNXP Semiconductors 恩智浦恩智浦半导体公司 | | | |
MMIC wideband amplifier Generaldescription SiliconMonolithicMicrowaveIntegratedCircuit(MMIC)widebandamplifierwithinternalmatchingcircuitina6-pinSOT363SMDplasticpackage. Features ■Internallymatchedto50? ■Widefrequencyrange(3.2GHzat3dBbandwidth) ■Flat23dBgain(±1dBupto2.7GHz) | PhilipsNXP Semiconductors 飞利浦荷兰皇家飞利浦 | | | |
RF Manual 16th edition Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp | nxpNXP Semiconductors 恩智浦恩智浦半导体公司 | | | |
MMIC wideband amplifier Generaldescription SiliconMonolithicMicrowaveIntegratedCircuit(MMIC)widebandamplifierwithinternalmatchingcircuitina6-pinSOT363SMDplasticpackage. Features ■Internallymatchedto50? ■Widefrequencyrange(3.2GHzat3dBbandwidth) ■Flat24dBgain(±1dBup | PhilipsNXP Semiconductors 飞利浦荷兰皇家飞利浦 | | | |
RF Manual 16th edition Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp | nxpNXP Semiconductors 恩智浦恩智浦半导体公司 | | | |
MMIC wideband amplifier DESCRIPTION SiliconMonoliticMicrowaveIntegratedCircuit(MMIC)widebandamplifierwithinternalmatchingcircuitina6-pinSOT363SMDplasticpackage. FEATURES ?Internallymatched ?Widefrequencyrange ?Optimizedfor900MHz ?Excellentisolation ?Lownoise ?Unconditionallystable | PhilipsNXP Semiconductors 飞利浦荷兰皇家飞利浦 | | | |
RF Manual 16th edition Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp | nxpNXP Semiconductors 恩智浦恩智浦半导体公司 | | | |
MMIC wideband amplifier DESCRIPTION SiliconMonolithicMicrowaveIntegratedCircuit(MMIC)widebandamplifierwithinternalmatchingcircuitina6-pinSOT363SMDplasticpackage. FEATURES ?Internallymatched ?Widefrequencyrange ?Veryflatgain ?Highoutputpower ?Highlinearity ?Unconditionallystable. | PhilipsNXP Semiconductors 飞利浦荷兰皇家飞利浦 | | | |
RF Manual 16th edition Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp | nxpNXP Semiconductors 恩智浦恩智浦半导体公司 | | | |
MMIC wideband amplifier DESCRIPTION SiliconMonolithicMicrowaveIntegratedCircuit(MMIC)widebandamplifierwithinternalmatchingcircuitina6-pinSOT363SMDplasticpackage. FEATURES ?Internallymatched ?Verywidefrequencyrange ?Veryflatgain ?Highgain ?Highoutputpower ?Unconditionallystable. | PhilipsNXP Semiconductors 飞利浦荷兰皇家飞利浦 | | | |
MMIC wideband amplifier DESCRIPTION SiliconMonolithicMicrowaveIntegratedCircuit(MMIC)widebandamplifierwithinternalmatchingcircuitina6-pinSOT363SMDplasticpackage. FEATURES ?Internallymatched ?Verywidefrequencyrange ?Veryflatgain ?Highgain ?Highoutputpower ?Unconditionallystable. | nxpNXP Semiconductors 恩智浦恩智浦半导体公司 | | | |
RF Manual 16th edition Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp | nxpNXP Semiconductors 恩智浦恩智浦半导体公司 | | | |
RF Manual 16th edition Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp | nxpNXP Semiconductors 恩智浦恩智浦半导体公司 | | | |
RF Manual 16th edition Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp | nxpNXP Semiconductors 恩智浦恩智浦半导体公司 | | | |
MMIC wideband amplifier Generaldescription SiliconMonolithicMicrowaveIntegratedCircuit(MMIC)widebandamplifierwithinternalmatchingcircuitina6-pinSOT363plasticSMDpackage. Featuresandbenefits ■Internallymatchedto50Ω ■Againof26dBat950MHz ■Outputpowerat1dBgaincompression=1dBm | nxpNXP Semiconductors 恩智浦恩智浦半导体公司 | | | |
RF Manual 16th edition Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp | nxpNXP Semiconductors 恩智浦恩智浦半导体公司 | | | |
RF Manual 16th edition Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp | nxpNXP Semiconductors 恩智浦恩智浦半导体公司 | | | |
RF Manual 16th edition Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp | nxpNXP Semiconductors 恩智浦恩智浦半导体公司 | | | |
RF Manual 16th edition Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp | nxpNXP Semiconductors 恩智浦恩智浦半导体公司 | | | |
RF Manual 16th edition Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp | nxpNXP Semiconductors 恩智浦恩智浦半导体公司 | | | |
RF Manual 16th edition Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp | nxpNXP Semiconductors 恩智浦恩智浦半导体公司 | | | |
RF Manual 16th edition Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp | nxpNXP Semiconductors 恩智浦恩智浦半导体公司 | | | |
RF Manual 16th edition Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp | nxpNXP Semiconductors 恩智浦恩智浦半导体公司 | | | |
RF Manual 16th edition Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp | nxpNXP Semiconductors 恩智浦恩智浦半导体公司 | | | |
RF Manual 16th edition Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp | nxpNXP Semiconductors 恩智浦恩智浦半导体公司 | | | |
RF Manual 16th edition Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp | nxpNXP Semiconductors 恩智浦恩智浦半导体公司 | | | |
RF Manual 16th edition Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp | nxpNXP Semiconductors 恩智浦恩智浦半导体公司 | | | |
RF Manual 16th edition Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp | nxpNXP Semiconductors 恩智浦恩智浦半导体公司 | | | |
RF Manual 16th edition Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp | nxpNXP Semiconductors 恩智浦恩智浦半导体公司 | | | |
RF Manual 16th edition Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp | nxpNXP Semiconductors 恩智浦恩智浦半导体公司 | | | |
Silicon Bipolar MMIC-Amplifier (Cascadable 50 W-gain block 9 dB typical gain at 1.0 GHz 9 dBm typical P-1dB at 1.0 GHz 3 dB-bandwidth: DC to 2.4 GHz) SiliconBipolarMMIC-Amplifier Preliminarydata ?Cascadable50?-gainblock ?9dBtypicalgainat1.0GHz ?9dBmtypicalP-1dBat1.0GHz ?3dB-bandwidth:DCto2.4GHz | SIEMENSSiemens Semiconductor Group 西门子德国西门子股份公司 |  | | |
The Atmel SAMA5D3 series is a high-performance, power-efficient embedded MPU based on the ARM? Cortex??A5 processor, achieving 536 MHz with power consumption levels below 0.5 mW in low-power mode. Description TheAtmel?|SMARTSAMA5D3seriesisahigh-performance,power-efficientembeddedMPUbasedontheARM?Cortex?-A5processor,achieving536MHzwithpowerconsumptionlevelsbelow0.5mWinlow-powermode.Thedevicefeaturesafloatingpointunitforhigh-precisioncomputingandacce | AtmelAtmel Corporation 爱特梅尔爱特梅尔公司 |  | |
BGA产品属性
- 类型
描述
- 型号
BGA
- 功能描述
射频放大器 RF SI
- RoHS
否
- 制造商
Skyworks Solutions, Inc.
- 类型
Low Noise Amplifier
- 工作频率
2.3 GHz to 2.8 GHz
- P1dB
18.5 dBm
- 输出截获点
37.5 dBm
- 功率增益类型
32 dB
- 噪声系数
0.85 dB
- 工作电源电压
5 V
- 电源电流
125 mA
- 测试频率
2.6 GHz
- 最大工作温度
+ 85 C
- 安装风格
SMD/SMT
- 封装/箱体
QFN-16
- 封装
Reel
BGA供应商更多...
| IC供应商 | 产品型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
深圳市杰顺创科技有限公司 |
BGA123L4E6327 |
Infineon/英飞凌 |
21+ |
TSLP-4 |
6000 |
原装现货正品 |
|
深圳市高捷芯城科技有限公司 |
BGA123L4E6327 |
Infineon(英飞凌) |
23+ |
DFN4(0.7x0.7) |
7350 |
现货供应,当天可交货!免费送样,原厂技术支持!!! |
|
深圳市得捷芯城科技有限公司 |
BGA123L4E6327 |
Infineon(英飞凌) |
23+ |
DFN4(0 |
12051 |
原装现货,免费供样,技术支持,原厂对接 |
|
深圳市弘扬芯城科技有限公司 |
BGA123L4E6327 |
Infineon(英飞凌) |
23+ |
DFN4(0.7x0.7) |
6000 |
诚信服务，绝对原装原盘 |
|
深圳市振宏微科技有限公司 |
BGA123L4E6327 |
Infineon/英飞凌 |
23+ |
TSLP-4 |
25630 |
原装正品 |
|
深圳市恒凯威科技开发有限公司 |
BGA123L4E6327 |
Infineon/英飞凌 |
21+ |
TSLP-4 |
6820 |
只做原装,质量保证 |
|
深圳市赛特兴科技有限公司 |
BGA123L4E6327XTSA1 |
Infineon(英飞凌) |
23+ |
标准封装 |
7000 |
原厂原装现货订货价格优势终端BOM表可配单提供样品 |
|
深圳市星佑电子有限公司 |
BGA123L4E6327XTSA1 |
Infineon(英飞凌) |
22+ |
标准封装 |
7000 |
原厂原装现货订货价格优势终端BOM表可配单提供样品 |
|
深圳市创新迹电子有限公司 |
BGA123L4E6327 |
Infineon/英飞凌 |
2022+ |
TSLP-4 |
48000 |
只做原装,原装,假一罚十 |
|
万三科技(深圳)有限公司 |
BGA123L4 |
Infineon(英飞凌) |
22+ |
NA |
500000 |
万三科技,秉承原装,购芯无忧 |
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- c1008
- c1000
- bul128a
- bul128
- bu406
- bq5
- biss0001
- BGA2802
- BGA2801
- BGA2800
- BGA2776
- BGA2771
- BGA2748,115
- BGA2748
- BGA2717
- BGA2716,115
- BGA2716
- BGA2715
- BGA2714,115
- BGA2714
- BGA2712,115
- BGA2712
- BGA2711,115
- BGA2711
- BGA2709,115
- BGA2709
- BGA2031/1,115
- BGA2031
- BGA2022,115
- BGA2022
- BGA2012
- BGA2011
- BGA2003,115
- BGA2003
- BGA2002,115
- BGA2002
- BGA2001,115
- BGA2001
- BGA0009-S
- BGA0007-S
- BGA0006-S
- BGA0004-S
- BGA0002-S
- BGA0001-S
- BG9832C
- BG9832B
- BG95-N1
- BG95-MF
- BG95-M6
- BG95-M5
- BG95-M4
- BG95-M3
- BG95-M2
- BG95-M1
- BG9.S
- BG7351K
- BG-716
- BG650
- BG5412K
- BG5351K
- BG5334S
- BG5307S
- BG5305S
- BG5262X
- BG5130R
- BG5120K
- BG505
- BG440
- BG409635
- BG403831
- BG40.1712-48VDC
- BG-32618
- BG3130
- BG3033S
- BG3031S
- BG3013PQ
- BG3013B
- BG3012PQ
- BG3011SQ
- BG3011PQ
- BG2C-5015
- BG2B-5015
- BG2A-NFH
- BG2A-NF
BGA数据表相关新闻
B-G474E-DPOW1
优势渠道
2023-6-29B-G431B-ESC1
优势渠道
2023-6-29BG95M6LA-64-SGNS
www.58chip.com
2022-5-20BGA524N6E6327 INFINEON/英飞凌
www.hfxcom.com
2021-11-29BGB741L7ESDE6327XTSA1
BGB741L7ESDE6327XTSA1
2021-6-23BGA2866，115
原装现货
2019-9-6
DdatasheetPDF页码索引
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