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FDB12N50FÖÐÎÄ×ÊÁÏ

³§¼ÒÐͺŠ| FDB12N50F |
Îļþ´óС | 597.28Kbytes |
Ò³ÃæÊýÁ¿ | 8Ò³ |
¹¦ÄÜÃèÊö | N-Channel MOSFET, FRFET 500V, 11.5A, 0.7Àª N-Channel MOSFET, FRFET 500V, 11.5A, 0.7¥Ø |
Êý¾ÝÊÖ²á | |
Éú²ú³§ÉÌ | Fairchild Semiconductor |
¼ò³Æ | Fairchild¡¾ÏÉͯ°ëµ¼Ìå¡¿ |
ÖÐÎÄÃû³Æ | ·ÉÕ×/ÏÉͯ°ëµ¼Ì幫˾¹ÙÍø |
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FDB12N50FÊý¾ÝÊÖ²á¹æ¸ñÊéPDFÏêÇé
Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild¡¯s proprietary, planar stripe, DMOS technology.
This advance technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficient switching mode power supplies and active power factor correction.
Features
? RDS(on) = 0.59¦¸ ( Typ.)@ VGS = 10V, ID = 6A
? Low gate charge ( Typ. 21nC)
? Low Crss ( Typ. 11pF)
? Fast switching
? 100 avalanche tested
? Improve dv/dt capability
? RoHS compliant
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Fairchild Semiconductor
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N-Channel MOSFET, FRFET 500V, 11.5A, 0.7¥Ø
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TO-263 |
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TO-263 |
30000 |
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- XC6204F23ADR
DatasheetÊý¾Ý±íPDFÒ³ÂëË÷Òý
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