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FDB12N50

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isc N-Channel MOSFET Transistor

N-Channel MOSFET 500V, 11.5A, 0.65¥Ø

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FDB12N50Êý¾ÝÊÖ²á¹æ¸ñÊéPDFÏêÇé

FEATURES

¡¤Drain Current : ID= 11.5A@ TC=25¡æ

¡¤Drain Source Voltage

: VDSS= 500V(Min)

¡¤Static Drain-Source On-Resistance

: RDS(on) = 0.65¦¸(Max) @ VGS= 10V

¡¤100 avalanche tested

¡¤Minimum Lot-to-Lot variations for robust device

performance and reliable operation

DESCRIPTION

¡¤motor drive, DC-DC converter, power switch

and solenoid drive.

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    N-Channel MOSFET 500V, 11.5A, 0.65¥Ø

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