λÖãºNDS351N > NDS351NÏêÇé
NDS351NÖÐÎÄ×ÊÁÏ

³§¼ÒÐͺŠ| NDS351N |
Îļþ´óС | 75.67Kbytes |
Ò³ÃæÊýÁ¿ | 6Ò³ |
¹¦ÄÜÃèÊö | N-Channel Logic Level Enhancement Mode Field Effect Transistor MOSFET DISC BY MFG 2/02 |
Êý¾ÝÊÖ²á | |
Éú²ú³§ÉÌ | Fairchild Semiconductor |
¼ò³Æ | Fairchild¡¾ÏÉͯ°ëµ¼Ìå¡¿ |
ÖÐÎÄÃû³Æ | ·ÉÕ×/ÏÉͯ°ëµ¼Ì幫˾¹ÙÍø |
LOGO |
NDS351NÊý¾ÝÊÖ²á¹æ¸ñÊéPDFÏêÇé
General Description
These N-Channel logic level enhancement mode power field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage applications in notebook computers, portable phones, PCMCIA cards, and other battery powered circuits where fast switching, and low in-line power loss are needed in a very small outline surface mount package.
Features
¡ö 1.1A, 30V. RDS(ON) = 0.25¦¸ @ VGS = 4.5V.
¡ö Proprietary package design using copper lead frame for superior thermal and electrical capabilities.
¡ö High density cell design for extremely low RDS(ON).
¡ö Exceptional on-resistance and maximum DC current capability.
¡ö Compact industry standard SOT-23 surface mount package.
NDS351N²úÆ·ÊôÐÔ
- ÀàÐÍ
ÃèÊö
- ÐͺÅ
NDS351N
- ¹¦ÄÜÃèÊö
MOSFET DISC BY MFG 2/02
- RoHS
·ñ
- ÖÆÔìÉÌ
STMicroelectronics
- ¾§Ìå¹Ü¼«ÐÔ
N-Channel
- ¼³¼«/Ô´¼«»÷´©µçѹ
650 V
- Õ¢/Ô´»÷´©µçѹ
25 V
- ©¼«Á¬ÐøµçÁ÷
130 A µç×è¼³¼«/Ô´¼«
- RDS£¨µ¼Í¨£©
0.014 Ohms
- ÅäÖÃ
Single
- °²×°·ç¸ñ
Through Hole
- ·â×°/ÏäÌå
Max247
- ·â×°
Tube
NDS351N¹©Ó¦ÉÌ...
¹©Ó¦ÉÌ | ÐͺŠ| Æ·ÅÆ | ÅúºÅ | ·â×° | ¿â´æ | ±¸×¢ | ¼Û¸ñ |
---|---|---|---|---|---|---|---|
ÉîÛÚÊÐÀ¤ÈÚµç×ӿƼ¼ÓÐÏÞ¹«Ë¾ |
NDS351N |
FAIRCHILD/ÏÉͯ |
24+ |
SOT23-3 |
60 |
Ö»×öÔ³§ÇþµÀ ¿É×·ËÝ»õÔ´ |
|
ÉîÛÚÊпƺãΰҵµç×ÓÓÐÏÞ¹«Ë¾ |
NDS351N |
FAIRCHILD/ÏÉͯ |
22+ |
SOT-23 |
9850 |
Ö»×öÔ×°ÕýÆ·¼ÙÒ»ÅâÊ®!Õý¹æÇþµÀ¶©»õ! |
|
ÉîÛÚÊкӷæöοƼ¼ÓÐÏÞ¹«Ë¾ |
NDS351NMOS(³¡Ð§Ó¦¹Ü) |
FAIRCHILD/ÏÉͯ |
2019+PB |
SOT-23 |
45000 |
Ô×°ÕýÆ· ¿Éº¬Ë°½»Ò× |
|
ÉîÛÚÊв©ºÆͨ¿Æ¼¼ÓÐÏÞ¹«Ë¾ |
NDS351N |
FAIRCHILD |
23+ |
SOT23 |
9365 |
¼Û¸ñÓÅÊÆ/Ô×°ÏÖ»õ/¿Í»§ÖÁÉÏ/»¶Ó¹ã´ó¿Í»§À´µç²éѯ |
|
ÉîÛÚÊк㴴´ïʵҵÓÐÏÞ¹«Ë¾ |
NDS351N |
FAIRCHILD |
17+ |
SOT-23 |
6200 |
100%Ô×°ÕýÆ·ÏÖ»õ |
|
ÉîÛÚÊи»³ÏÍþ¿Æ¼¼ÓÐÏÞ¹«Ë¾ |
NDS351N |
FAIRCHILD |
24+ |
SOT-3 |
4897 |
¾ø¶ÔÔ×°!ÏÖ»õÈÈÂô! |
|
ÉîÛÚÊÐÓÀ±´¶û¿Æ¼¼ÓÐÏÞ¹«Ë¾ |
NDS351N |
FAIRCHILD |
23+ |
NA |
19960 |
Ö»×ö½ø¿ÚÔ×°,Öն˹¤³§Ãâ·ÑËÍÑù |
|
ÉîÛÚÕ×Íþµç×ÓÓÐÏÞ¹«Ë¾ |
NDS351N |
FAIRCHILD |
23+ |
SOT-23 |
63000 |
Ô×°ÕýÆ·ÏÖ»õ |
|
ÉîÛÚÊнüƽµç×ÓÓÐÏÞ¹«Ë¾ |
NDS351N |
FAIRCHILD |
6000 |
ÃæÒé |
19 |
SOT-23 |
|
ÉîÛÚ³Ï˼º¿Æ¼¼ÓÐÏÞ¹«Ë¾ |
NDS351N |
Fairchild |
19+ |
SOT-23 |
200000 |
NDS351N ¼Û¸ñ
²Î¿¼¼Û¸ñ£º£¤0.4940
NDS351N ×ÊÁÏÏÂÔظü¶à...
NDS351N ²úÆ·Ïà¹ØÐͺÅ
- NDB5060L
- NDB508B
- NDB603
- NDB6030L
- NDB603AL
- NDB608B
- NDB710B
- NDP408
- NDP408B
- NDP508B
- NDP6060L
- NDP7052L
- NDP7060
- NDP708AE
- NDS355N
- NDS9410
- NDS9933
- NDT3055L
- NE5532N
- OR2C12A-2S352
- OR2C12A-4BC352
- OR2C12A-4PS352
- OR2C12A-5S352
- OR2C12A-6S352
- OR2C12A-7BC352
- OR2T12A-5J352
- OR2T12A-5T304
- OR2T12A-6M352
- OR2T12A-6S352
- OR2T12A-7M352
DatasheetÊý¾Ý±íPDFÒ³ÂëË÷Òý
- P1
- P2
- P3
- P4
- P5
- P6
- P7
- P8
- P9
- P10
- P11
- P12
- P13
- P14
- P15
- P16
- P17
- P18
- P19
- P20
- P21
- P22
- P23
- P24
- P25
- P26
- P27
- P28
- P29
- P30
- P31
- P32
- P33
- P34
- P35
- P36
- P37
- P38
- P39
- P40
- P41
- P42
- P43
- P44
- P45
- P46
- P47
- P48
- P49
- P50
- P51
- P52
- P53
- P54
- P55
- P56
- P57
- P58
- P59
- P60
- P61
- P62
- P63
- P64
- P65
- P66
- P67
- P68
- P69
- P70
- P71
- P72
- P73
- P74
- P75
- P76
- P77
- P78
- P79
- P80
- P81
- P82
- P83
- P84
- P85
- P86
- P87
- P88
- P89
- P90
- P91
- P92
- P93
- P94
- P95
Fairchild Semiconductor ·ÉÕ×/ÏÉͯ°ëµ¼Ì幫˾
Fairchild SemiconductorÊÇÒ»¼ÒÔø¾´æÔڵİ뵼ÌåÖÆÔìÉÌ£¬×ܲ¿Î»ÓÚÃÀ¹ú¼ÓÖÝÊ¥¿ËÀÀ¡£Fairchild Semiconductor³ÉÁ¢ÓÚ1957Ä꣬ÊÇ×îÔçÆڵİ뵼Ì幫˾֮һ£¬×¨×¢ÓÚÉú²ú¸÷ÖÖ°ëµ¼ÌåÆ÷¼þ£¬°üÀ¨¾§Ìå¹Ü¡¢¼¯³Éµç·¡¢¹¦ÂÊÄ£¿éµÈ²úÆ·¡£ Fairchild SemiconductorÔÚ°ëµ¼ÌåÐÐÒµ¾ßÓÐÓƾõÄÀúÊ·ºÍ·á¸»µÄ¾Ñ飬Ôø¾ÊÇÈ«ÇòÁìÏȵİ뵼Ì幫˾֮һ£¬Æä²úÆ·±»¹ã·ºÓ¦ÓÃÓÚÏû·Ñµç×Ó¡¢Í¨ÐÅ¡¢¹¤Òµ¡¢Æû³µµÈÁìÓò¡£Fairchild SemiconductorÒÔÆ䴴еļ¼ÊõºÍ¸ßÐÔÄܵIJúÆ·¶øÎÅÃû£¬ÓµÓÐÖÚ¶àרÀûºÍ¼¼Êõ³É¹û¡£ 2016Ä꣬Fairchild Semiconductor±»ON