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General Description

These N-Channel logic level enhancement mode power field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage applications in notebook computers, portable phones, PCMCIA cards, and other battery powered circuits where fast switching, and low in-line power loss are needed in a very small outline surface mount package.

Features

¡ö 1.1A, 30V. RDS(ON) = 0.25¦¸ @ VGS = 4.5V.

¡ö Proprietary package design using copper lead frame for superior thermal and electrical capabilities.

¡ö High density cell design for extremely low RDS(ON).

¡ö Exceptional on-resistance and maximum DC current capability.

¡ö Compact industry standard SOT-23 surface mount package.