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IRFR120价格
参考价格：￥4.2145
型号：IRFR120 品牌：Vishay 备注：这里有IRFR120多少钱，2025年最近7天走势，今日出价，今日竞价，IRFR120批发/采购报价，IRFR120行情走势销售排行榜，IRFR120报价。| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
IRFR120 | 8.4A,100V,0.270Ohm,N-ChannelPowerMOSFETs TheseareN-Channelenhancementmodesilicongatepowerfieldeffecttransistors.TheyareadvancedpowerMOSFETsdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.AllofthesepowerMOSFETsaredesignedforapplicationssuchas | Intersil Intersil Corporation |  |   |
IRFR120 | HEXFETPOWERMOSFET DESCRIPTION ThirdGenerationHEXFETsfromInternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. FEATURES ?DynamicdV/dtRating ?RepetitiveAvalancheRated ?SurfaceMount(IRFR120) ?Str | IRF International Rectifier |  | |
IRFR120 | IRFR120 DESCRIPTION ThirdgenerationpowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Thest | VishayVishay Siliconix 威世科技威世科技半导体 |  | |
IRFR120 | PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Thest | KERSEMI Kersemi Electronic Co., Ltd. |  | |
IRFR120 | PowerMOSFET FEATURES ?DynamicdV/dtrating ?Repetitiveavalancherated ?Surface-mount(IRFR120,SiHFR120) ?Straightlead(IRFU120,SiHFU120) ?Availableintapeandreel ?Fastswitching ?Easeofparalleling ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?9 | VishayVishay Siliconix 威世科技威世科技半导体 | | |
IRFR120 | N-channelEnhancementModePowerMOSFET Features ?VDS=100V,ID=18.1A RDS(ON) | BychipBYCHIP ELECTRONICS CO., LIMITED 百域芯深圳市百域芯科技有限公司 |  | |
IRFR120 | iscN-ChannelMOSFETTransistor 文件：321.05 Kbytes Page：2 Pages | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 |  | |
PowerMOSFET FEATURES ?DynamicdV/dtrating ?Repetitiveavalancherated ?Surface-mount(IRFR120,SiHFR120) ?Straightlead(IRFU120,SiHFU120) ?Availableintapeandreel ?Fastswitching ?Easeofparalleling ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?9 | VishayVishay Siliconix 威世科技威世科技半导体 | | | |
MOSFET Features VDS(V)=55V ID=44A(VGS=10V) RDS(ON) | EVVOSEMIEVER SEMICONDUCTOR CO.,LIMITED 翊欧翊欧半导体 |  | | |
UltraLowOn-Resistance Description TheD-PAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Thestraightleadversion(IRFUseries)isforthroughholemountingapplications.Powerdissipationlevelsupto1.5wattsarepossibleintypicalsurfacemountapplications. ?Ultr | KERSEMI Kersemi Electronic Co., Ltd. | | | |
PowerMOSFET(Vdss=55V,Rds(on)=0.027ohm,Id=44A?? Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachievethelowestpossibleon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,p | IRF International Rectifier | | | |
HEXFETPowerMOSFET Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachievethelowestpossibleon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor, | IRF International Rectifier | | | |
ULTRALOWON-RESISTANCE Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachievethelowestpossibleon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor, | KERSEMI Kersemi Electronic Co., Ltd. | | | |
MOSFET Features VDS(V)=55V ID=44A(VGS=10V) RDS(ON) | EVVOSEMIEVER SEMICONDUCTOR CO.,LIMITED 翊欧翊欧半导体 | | | |
UltraLowOn-Resistance Features VDS(V)=55V ID=44A(VGS=10V) RDS(ON)27m(VGS=10V) | UMWGuangdong Youtai Semiconductor Co., Ltd. 友台半导体广东友台半导体有限公司 |  | | |
UltraLowOn-Resistance Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachievethelowestpossibleon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor, | IRF International Rectifier | | | |
N-ChannelEnhancementModeMOSFE Features| ?Vos=60V,lo=28A Rosny | TECHPUBLICTECH PUBLIC Electronics co LTD 台舟电子台舟电子股份有限公司 |  | | |
PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Thest | KERSEMI Kersemi Electronic Co., Ltd. | | | |
HEXFETPowerMOSFET Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachievethelowestpossibleon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,p | IRF International Rectifier | | | |
MOSFET Description TheD-PAKisdesignedforsurfacemounting usingvaporphase,infraredorwavesoldering techniques.Powerdissipationlevelsupto 1.5wattsarepossibleintypicalsurfacemount applications. Features VDS(V)=100V ID=9.4A(VGS=10V) RDS(ON)=210mW(VGS=10V) | EVVOSEMIEVER SEMICONDUCTOR CO.,LIMITED 翊欧翊欧半导体 | | | |
TheD-PAKisdesignedforsurfacemountingusingvaporphase,infraredorwavesolderingtechniques. Features VDS(V)=100V ID=9.4A(VGS=10V) RDS(ON)=210mW(VGS=10V) | UMWGuangdong Youtai Semiconductor Co., Ltd. 友台半导体广东友台半导体有限公司 | | | |
FastSwitching VDSS=100V RDS(on)=0.21? ID=9.4A Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachievethelowestpossibleon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedes | IRF International Rectifier | | | |
SurfaceMount(IRFR120N)StraightLead(IRFU120N) VDSS=100V RDS(on)=0.21? ID=9.4A Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachievethelowestpossibleon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedes | KERSEMI Kersemi Electronic Co., Ltd. | | | |
N-Channel100-V(D-S)MOSFET Features @Ros=100m@VGS=10V ?SuperhighdensitycelldesignforextremelylowRDS(ON) ?Exceptionalon-resistanceandmaximumDCcurrent | TECHPUBLICTECH PUBLIC Electronics co LTD 台舟电子台舟电子股份有限公司 | | | |
MOSFET Description TheD-PAKisdesignedforsurfacemounting usingvaporphase,infraredorwavesoldering techniques.Powerdissipationlevelsupto 1.5wattsarepossibleintypicalsurfacemount applications. Features VDS(V)=100V ID=9.4A(VGS=10V) RDS(ON)=210mW(VGS=10V) | EVVOSEMIEVER SEMICONDUCTOR CO.,LIMITED 翊欧翊欧半导体 | | | |
TheD-PAKisdesignedforsurfacemountingusingvaporphase,infraredorwavesolderingtechniques. Features VDS(V)=100V ID=9.4A(VGS=10V) RDS(ON)=210mW(VGS=10V) | UMWGuangdong Youtai Semiconductor Co., Ltd. 友台半导体广东友台半导体有限公司 | | | |
PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Thest | KERSEMI Kersemi Electronic Co., Ltd. | | | |
IRFR120 DESCRIPTION ThirdgenerationpowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Thest | VishayVishay Siliconix 威世科技威世科技半导体 | | | |
IRFR120 DESCRIPTION ThirdgenerationpowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Thest | VishayVishay Siliconix 威世科技威世科技半导体 | | | |
HEXFETPOWERMOSFET DESCRIPTION ThirdGenerationHEXFETsfromInternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. FEATURES ?DynamicdV/dtRating ?RepetitiveAvalancheRated ?SurfaceMount(IRFR120) ?Str | IRF International Rectifier | | | |
PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effictiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Thest | VishayVishay Siliconix 威世科技威世科技半导体 | | | |
DynamicdV/dtRating DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effictiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Thest | KERSEMI Kersemi Electronic Co., Ltd. | | | |
IRFR120 DESCRIPTION ThirdgenerationpowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Thest | VishayVishay Siliconix 威世科技威世科技半导体 | | | |
PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Thest | KERSEMI Kersemi Electronic Co., Ltd. | | | |
DynamicdV/dtRating DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effictiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Thest | KERSEMI Kersemi Electronic Co., Ltd. | | | |
PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Thest | KERSEMI Kersemi Electronic Co., Ltd. | | | |
IRFR120 DESCRIPTION ThirdgenerationpowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Thest | VishayVishay Siliconix 威世科技威世科技半导体 | | | |
PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effictiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Thest | VishayVishay Siliconix 威世科技威世科技半导体 | | | |
IRFR120 DESCRIPTION ThirdgenerationpowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Thest | VishayVishay Siliconix 威世科技威世科技半导体 | | | |
PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Thest | KERSEMI Kersemi Electronic Co., Ltd. | | | |
PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Thest | KERSEMI Kersemi Electronic Co., Ltd. | | | |
IRFR120 DESCRIPTION ThirdgenerationpowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Thest | VishayVishay Siliconix 威世科技威世科技半导体 | | | |
IRFR120 DESCRIPTION ThirdgenerationpowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Thest | VishayVishay Siliconix 威世科技威世科技半导体 | | | |
PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Thest | KERSEMI Kersemi Electronic Co., Ltd. | | | |
AUTOMOTIVEMOSFET AUTOMOTIVEMOSFET Description SpecificallydesignedforAutomotiveapplications,thisHEXFET?PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemperature,fastswitch | KERSEMI Kersemi Electronic Co., Ltd. | | | |
N-ChannelMOSFETTransistor ?DESCRITION ?Fastswitching ?FEATURES ?Staticdrain-sourceon-resistance: RDS(on)≤190m? ?Enhancementmode: ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | | | |
AUTOMOTIVEMOSFET AUTOMOTIVEMOSFET Description SpecificallydesignedforAutomotiveapplications,thisHEXFET?PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemperature,fastswitch | IRF International Rectifier | | | |
N-ChannelEnhancementModeMOSFET Description TheD-PAKisdesignedforsurfacemounting usingvaporphase,infraredorwavesoldering techniques.Powerdissipationlevelsupto 1.5wattsarepossibleintypicalsurfacemo- untapplications. Features VDS(V)=100V ID=9.4A(VGS=10V) RDS(ON)=210mW(VGS=10V) | EVVOSEMIEVER SEMICONDUCTOR CO.,LIMITED 翊欧翊欧半导体 | | | |
AUTOMOTIVEMOSFET AUTOMOTIVEMOSFET Description SpecificallydesignedforAutomotiveapplications,thisHEXFET?PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemperature,fastswitch | IRF International Rectifier | | | |
AUTOMOTIVEMOSFET AUTOMOTIVEMOSFET Description SpecificallydesignedforAutomotiveapplications,thisHEXFET?PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemperature,fastswitch | KERSEMI Kersemi Electronic Co., Ltd. | | | |
AUTOMOTIVEMOSFET AUTOMOTIVEMOSFET Description SpecificallydesignedforAutomotiveapplications,thisHEXFET?PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemperature,fastswitch | KERSEMI Kersemi Electronic Co., Ltd. | | | |
N-ChannelMOSFETTransistor 文件：334.65 Kbytes Page：2 Pages | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | | | |
ULTRALOWONRESISTANCE 文件：398.79 Kbytes Page：11 Pages | IRF International Rectifier | | | |
ULTRALOWONRESISTANCE 文件：398.79 Kbytes Page：11 Pages | IRF International Rectifier | | | |
N-Channel60-V(D-S)MOSFET 文件：988.71 Kbytes Page：6 Pages | VBSEMIVBsemi Electronics Co.,Ltd 微碧半导体微碧半导体（台湾）有限公司 |  | | |
UltraLowOn-Resistance 文件：4.02641 Mbytes Page：10 Pages | KERSEMI Kersemi Electronic Co., Ltd. | | | |
N-Channel60-V(D-S)MOSFET 文件：988.67 Kbytes Page：6 Pages | VBSEMIVBsemi Electronics Co.,Ltd 微碧半导体微碧半导体（台湾）有限公司 | | | |
iscN-ChannelMOSFETTransistor 文件：373.61 Kbytes Page：2 Pages | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | | | |
AdvancedPowerMOSFET 文件：258.5 Kbytes Page：7 Pages | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 |  | | |
AvalancheRuggedTechnology 文件：258.5 Kbytes Page：7 Pages | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | | |
IRFR120产品属性
- 类型
描述
- 型号
IRFR120
- 功能描述
MOSFET N-Chan 100V 7.7 Amp
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS（导通）
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
IRFR120供应商更多...
| IC供应商 | 产品型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
深圳市纳艾斯科技有限公司 |
IRFR120NTRPBF |
IR |
2020+ |
TO-252 |
8000 |
只做自己库存,全新原装进口正品假一赔百,可开13%增 |
|
深圳市讯顺达科技有限公司 |
IRFR120NTRPBF |
IR |
21+ |
TO-252 |
16000 |
全新原装公司现货
|
|
中天科工半导体（深圳）有限公司 |
IRFR120ZTRPBF |
Infineon Technologies |
24+ |
D-Pak |
30000 |
晶体管-分立半导体产品-原装正品 |
|
深圳市星宇佳科技有限公司 |
IRFR120NTRL |
IR |
00+ |
TO-252 |
413 |
深圳原装进口现货 |
|
深圳市富利微电子科技有限公司 |
IRFR120TRPBF |
VISHAY |
24+ |
TO-252 |
20540 |
保证进口原装现货假一赔十 |
|
深圳市凌旭科技有限公司 |
IRFR120NTRPBF |
INFINEON |
21+ |
TO-252 |
26000 |
十年信誉,只做原装,有挂就有现货! |
|
深圳市恒达亿科技有限公司 |
IRFR120NTRPBF |
INFINEON |
23+ |
TO252 |
6000 |
全新原装现货、诚信经营! |
|
深圳市宝芯创电子有限公司 |
IRFR120NTRPBF |
INFINEON |
21+ |
TO252 |
900 |
只做原装,公司现货,提供一站式BOM配单服务! |
|
深圳市千科宇科技有限公司 |
IRFR120TRPBF |
VISHAY/威世 |
17+ |
TSSOP |
105 |
正规渠道原装正品 |
|
深圳市和悦电子贸易有限公司 |
IRFR120NTRPBF |
IR/INFINEON |
21+ |
TO-252 |
250 |
IRFR120产品相关品牌
IRFR120规格书下载地址
IRFR120参数引脚图相关
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- IRFR15N20DTRLP
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- IRFR13N20DTRLP
- IRFR13N20DPBF
- IRFR13N15DTRPBF
- IRFR13N15DPBF
- IRFR120ZTRPBF
- IRFR120ZTRLPBF
- IRFR120ZPBF
- IRFR120TRPBF-CUTTAPE
- IRFR120TRPBF
- IRFR120PBF
- IRFR120NTRPBF
- IRFR120NTRLPBF-CUTTAPE
- IRFR120NTRLPBF
- IRFR120NPBF
- IRFR1205TRPBF
- IRFR1205TRLPBF
- IRFR1205PBF
- IRFR110TRPBF-CUTTAPE
- IRFR110TRPBF
- IRFR110TRLPBF
- IRFR110PBF
- IRFR110
- IRFR1018ETRPBF
- IRFR1018EPBF
- IRFR1010ZPBF
- IRFR024TRPBF-CUTTAPE
- IRFR024TRPBF
- IRFR024PBF
- IRFR024NTRPBF-CUTTAPE
- IRFR024NTRPBF
- IRFR024NTRLPBF
- IRFR024NPBF
- IRFR024
- IRFR020TRPBF
- IRFR020PBF
- IRFR020
- IRFR014TRPBF
- IRFR014PBF
- IRFR014
- IRFR012
- IRFR010PBF
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- IRFQ110
- IRFPS43N50KPBF
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- IRFPG40
- IRFPG30
- IRFPF50
- IRFPF40
- IRFPF30
- IRFPE50
- IRFPE40
- IRFPE30
- IRFPC60
- IRFPC50
- IRFPC48
- IRFPC40
IRFR120数据表相关新闻
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属性参数值 商品目录场效应管(MOSFET) 漏源电压(Vdss)200V 连续漏极电流(Id)13A 功率(Pd)110W 导通电阻(RDS(on)@Vgs，Id)235mΩ10V，8A 阈值电压(Vgs(th)@Id)5.5V250μA 类型N沟道
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DdatasheetPDF页码索引
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