位置：利博首页 > IC中文资料第9973页 > M59DR032E-ZBT
| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
M59DR032E-ZBT | 32Mbit(2Mbx16,DualBank,Page)1.8VSupplyFlashMemory SUMMARYDESCRIPTION TheM59DR032Eisa32Mbit(2Mbitx16)non-volatileFlashmemorythatmaybeerasedelectricallyatblocklevelandprogrammedin-systemonaWord-by-Wordbasisusinga1.65Vto2.2VVDDsupplyforthecircuitryanda1.65Vto2.2VVDDQsupplyfortheInput/Outputpins.Anopt | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 |  |   |
32Mbit2Mbx16,DualBank,PageLowVoltageFlashMemory DESCRIPTION TheM59DR032isa32Mbitnon-volatileFlashmemorythatmaybeerasedelectricallyatblocklevelandprogrammedin-systemonaWord-byWordbasisusinga1.65Vto2.2VVDDsupplyforthecircuitry.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally. | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
32Mbit2Mbx16,DualBank,PageLowVoltageFlashMemory DESCRIPTION TheM59DR032isa32Mbitnon-volatileFlashmemorythatmaybeerasedelectricallyatblocklevelandprogrammedin-systemonaWord-byWordbasisusinga1.65Vto2.2VVDDsupplyforthecircuitry.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally. | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
32Mbit2Mbx16,DualBank,PageLowVoltageFlashMemory DESCRIPTION TheM59DR032isa32Mbitnon-volatileFlashmemorythatmaybeerasedelectricallyatblocklevelandprogrammedin-systemonaWord-byWordbasisusinga1.65Vto2.2VVDDsupplyforthecircuitry.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally. | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
32Mbit2Mbx16,DualBank,PageLowVoltageFlashMemory DESCRIPTION TheM59DR032isa32Mbitnon-volatileFlashmemorythatmaybeerasedelectricallyatblocklevelandprogrammedin-systemonaWord-byWordbasisusinga1.65Vto2.2VVDDsupplyforthecircuitry.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally. | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
32Mbit2Mbx16,DualBank,PageLowVoltageFlashMemory DESCRIPTION TheM59DR032isa32Mbitnon-volatileFlashmemorythatmaybeerasedelectricallyatblocklevelandprogrammedin-systemonaWord-byWordbasisusinga1.65Vto2.2VVDDsupplyforthecircuitry.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally. | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | |
M59DR032E-ZBT产品属性
- 类型
描述
- 型号
M59DR032E-ZBT
- 制造商
STMICROELECTRONICS
- 制造商全称
STMicroelectronics
- 功能描述
32 Mbit(2Mb x 16, Dual Bank, Page ) 1.8V Supply Flash Memory
M59DR032E-ZBT供应商更多...
| IC供应商 | 产品型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
深圳市威雅利发展有限公司 |
M59DR032FA70ZF6 |
ST |
2005 |
BGA |
28 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|
深圳市得捷芯城科技有限公司 |
M59MR032C120GC6 |
ST/意法 |
23+ |
NA/ |
341 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
|
深圳市明嘉莱科技有限公司 |
M59MR032C |
ST/意法 |
24+ |
NA |
990000 |
明嘉莱只做原装正品现货 |
|
深圳市科恒伟业电子有限公司 |
M59MR032C-120GC6 |
ST |
1926+ |
BGA |
6852 |
只做原装正品现货!或订货假一赔十! |
|
深圳市豪迈兴电子有限公司 |
M59MR032C120GC6 |
ST |
24+ |
BGA |
5632 |
公司原厂原装现货假一罚十!特价出售!强势库存! |
|
绿盛电子(香港)有限公司 |
M59DR032FA |
ST |
2018+ |
BGA |
26976 |
代理原装现货/特价热卖! |
|
深圳市恒达亿科技有限公司 |
M59DR032FA70ZF6T |
ST |
23+ |
BGA |
3200 |
全新原装、诚信经营、公司现货销售! |
|
深圳市赛美科科技有限公司 |
M59MR032C |
原厂原装 |
ROHS |
13352 |
一级代理 原装正品假一罚十价格优势长期供货 |
||
深圳兆威电子有限公司 |
M59MR032C120GC6T |
ST |
23+ |
BGA |
17 |
旧货 |
|
贸泽芯城（深圳）电子科技有限公司 |
M59DR032FA |
ST/意法 |
23+ |
BGA |
3000 |
一级代理原厂VIP渠道,专注军工、汽车、医疗、工业、 |
M59DR032E-ZBT产品相关品牌
M59DR032E-ZBT规格书下载地址
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