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    NAND512R3A2CZA6F中文资料

    厂家型号

    NAND512R3A2CZA6F

    文件大小

    1270.65Kbytes

    页面数量

    51

    功能描述

    512 Mbit, 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories

    SLC NAND Flash Parallel 1.8V 512Mbit 64M x 8bit 15us 63-Pin VFBGA T/R

    数据手册

    下载地址一下载地址二

    生产厂商

    numonyx

    简称

    NUMONYX

    中文名称

    官网

    LOGO

    NAND512R3A2CZA6F数据手册规格书PDF详情

    Description

    The NAND Flash 528 Byte/ 264 Word Page is a family of non-volatile Flash memories that

    uses the Single Level Cell (SLC) NAND cell technology. It is referred to as the Small Page

    family. The NAND512R3A2C, NAND512R4A2C, NAND512W3A2C, and NAND512W4A2C

    have a density of 512 Mbits and operate with either a 1.8V or 3V voltage supply. The size of

    a Page is either 528 Bytes (512 + 16 spare) or 264 Words (256 + 8 spare) depending on

    whether the device has a x8 or x16 bus width.

    The address lines are multiplexed with the Data Input/Output signals on a multiplexed x8 or

    x16 Input/Output bus. This interface reduces the pin count and makes it possible to migrate

    to other densities without changing the footprint.

    To extend the lifetime of NAND Flash devices it is strongly recommended to implement an

    Error Correction Code (ECC). The use of ECC correction allows to achieve up to 100,000

    program/erase cycles for each block. A Write Protect pin is available to give a hardware

    protection against program and erase operations.

    Features

    ● High density NAND Flash memories

    – 512 Mbit memory array

    – Cost effective solutions for mass storage applications

    ● NAND interface

    – x 8 or x 16 bus width

    – Multiplexed Address/ Data

    ● Supply voltage: 1.8 V, 3.0 V

    ● Page size

    – x 8 device: (512 + 16 spare) bytes

    – x 16 device: (256 + 8 spare) words

    ● Block size

    – x 8 device: (16 K + 512 spare) bytes

    – x 16 device: (8 K + 256 spare) words

    ● Page Read/Program

    – Random access: 12 ?s (3 V)/15 ?s (1.8 V) (max)

    – Sequential access: 30 ns (3 V)/50 ns (1.8 V) (min)

    – Page Program time: 200 ?s (typ)

    ● Copy Back Program mode

    ● Fast Block Erase: 2 ms (typ)

    ● Status Register

    ● Electronic signature

    ● Chip Enable ‘don’t care’

    ● Serial Number option

    ● Hardware Data Protection

    – Program/Erase locked during Power transitions

    ● Data integrity

    – 100,000 Program/Erase cycles (with ECC)

    – 10 years Data Retention

    ● ECOPACK? packages

    ● Development tools

    – Error Correction Code models

    – Bad Blocks Management and Wear Leveling algorithms

    – Hardware simulation models

    NAND512R3A2CZA6F产品属性

    • 类型

      描述

    • 型号

      NAND512R3A2CZA6F

    • 制造商

      Micron Technology Inc

    • 功能描述

      SLC NAND Flash Parallel 1.8V 512Mbit 64M x 8bit 15us 63-Pin VFBGA T/R

    NAND512R3A2CZA6F供应商...

    更新时间:2025-3-23 11:00:00
    供应商 型号 品牌 批号 封装 库存 备注 价格
    深圳市莱克讯科技有限公司
    NAND512R3A2CZR6F
    ST
    1923+
    BGA
    12008
    原装进口现货库存专业工厂研究所配单供货
    深圳市利加科技有限公司
    NAND512R3A2DZA6
    NUMONY
    16+
    NA
    8800
    原装现货,货真价优
    深圳诚思涵科技有限公司
    NAND512R3A2DZA6
    ST
    16+
    TQFP
    4000
    进口原装现货/价格优势!
    深圳市鑫宇杨电子科技有限公司
    NAND512R3A2DZA6
    NUMONY
    2020+
    原厂封装
    350000
    100%进口原装正品公司现货库存
    深圳市科恒伟业电子有限公司
    NAND512R3A2DZA6
    ST
    1728+
    VFBGA-63
    6528
    只做进口原装正品假一赔十!
    深圳市华来深电子有限公司
    NAND512R3A2DZA6
    ST
    23+
    FBGA
    8560
    受权代理!全新原装现货特价热卖!
    艾睿国际(香港)有限公司
    NAND512R3A2DZA6
    ST
    2447
    BGA
    100500
    一级代理专营品牌!原装正品,优势现货,长期排单到货
    深圳市能创芯电子科技有限公司
    NAND512R3A2DZA6
    ST
    23+
    BGA
    3000
    原装正品假一罚百!可开增票!
    深圳市威尔健半导体有限公司
    NAND512R3A2DZA6
    ST/意法
    23+
    BGA
    50000
    全新原装正品现货,支持订货
    深圳市创盛芯科技有限公司
    NAND512R3A2DZA6
    ST/意法
    24+
    BGA
    81
    原装现货假一赔十

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    NUMONYX相关电路图

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    numonyx

    中文资料: 4589条

    Numonyx是一家曾经存在的存储技术公司,于2008年由英特尔(Intel)和STMicroelectronics共同创立。Numonyx专注于非易失性存储器(NVM)技术和闪存存储器技术,为客户提供各种存储解决方案和产品。 Numonyx的产品包括闪存存储器、嵌入式存储器、非易失性存储器等,在计算机、消费电子、通信、汽车等领域得到广泛应用。公司致力于技术创新与研发,不断提升产品性能、可靠性和创新性,以满足客户不断增长的需求。 2010年,美国存储技术公司Micron Technology收购了Numonyx,并将其整合为Micron的一部分。这一收购使Micron得以拓展其存储技术领域的产


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