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SG3525AP | REGULATINGPULSEWIDTHMODULATORS DESCRIPTION TheSG3525Aseriesofpulsewidthmodulatorintegratedcircuitsaredesignedtoofferimprovedperformanceandloweredexternalpartscountwhenusedindesigningalltypesofswitchingpowersupplies.Theon-chip+5.1Vreferenceistrimmedto¡À1andtheinputcommon-moderangeof | STMICROELECTRONICSSTMicroelectronics Òâ·¨°ëµ¼ÌåÒâ·¨°ëµ¼Ì弯ÍÅ | ||
SG3525AP | Theworkingvoltagerangeis8~35V description Theaccuracyofthechip+5.1Vreferencevoltageis1.Becausethereferencevoltageiswithintheinputcommon-moderangeoftheerroramplifier,thereisnoneedforanexternalresistor.3525canworkinmaster-slavemodeandcanalsobesynchronizedwithexternalclock.Thedeadt | UMWGuangdong Youtai Semiconductor Co., Ltd. ÓÑ̨°ëµ¼Ìå¹ã¶«ÓÑ̨°ëµ¼ÌåÓÐÏÞ¹«Ë¾ | ||
SG3525AP | ·â×°/Íâ¿Ç£º16-SOIC£¨0.154"£¬3.90mm ¿í£© ¹¦ÄÜ£º½µÑ¹£¬Éýѹ/½µÑ¹ °ü×°£º¾í´ø£¨TR£©¼ôÇдø£¨CT£©Digi-Reel? µÃ½Ý¶¨Öƾí´ø ÃèÊö£ºIC REG CTRLR BCK/PSH-PULL 16SOIC ¼¯³Éµç·£¨IC£© PMIC - ÎÈѹÆ÷ - DC DC ¿ª¹Øʽ¿ØÖÆÆ÷ | STMICROELECTRONICSSTMicroelectronics Òâ·¨°ëµ¼ÌåÒâ·¨°ëµ¼Ì弯ÍÅ | ![]() ![]() | |
SG3525AP | ·â×°/Íâ¿Ç£º16-SOIC£¨0.154"£¬3.90mm ¿í£© ¹¦ÄÜ£º½µÑ¹£¬Éýѹ/½µÑ¹ °ü×°£º¾í´ø£¨TR£©¼ôÇдø£¨CT£©Digi-Reel? µÃ½Ý¶¨Öƾí´ø ÃèÊö£ºIC REG CTRLR BCK/PSH-PULL 16SOIC ¼¯³Éµç·£¨IC£© DC-DC ¿ª¹Ø¿ØÖÆÆ÷ | STMICROELECTRONICSSTMicroelectronics Òâ·¨°ëµ¼ÌåÒâ·¨°ëµ¼Ì弯ÍÅ | ![]() ![]() | |
SG3525AP | REGULATINGPULSEWIDTHMODULATORS Îļþ£º939.46 Kbytes Page£º12 Pages | STMICROELECTRONICSSTMicroelectronics Òâ·¨°ëµ¼ÌåÒâ·¨°ëµ¼Ì弯ÍÅ | ||
REGULATINGPULSEWIDTHMODULATORS Îļþ£º939.46 Kbytes Page£º12 Pages | STMICROELECTRONICSSTMicroelectronics Òâ·¨°ëµ¼ÌåÒâ·¨°ëµ¼Ì弯ÍÅ | |||
iscN-ChannelMOSFETTransistor FEATURES ¡¤DrainCurrent:ID=20A@TC=25¡æ ¡¤DrainSourceVoltage :VDSS=350V(Min) ¡¤StaticDrain-SourceOn-Resistance :RDS(on)=0.25¦¸(Max)@VGS=10V ¡¤100avalanchetested ¡¤MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ¡¤motordrive,DC- | ISCInchange Semiconductor Company Limited ÎÞÎý¹ÌµçÎÞÎý¹Ìµç°ëµ¼Ìå¹É·ÝÓÐÏÞ¹«Ë¾ | |||
iscN-ChannelMOSFETTransistor DESCRIPTION ¡¤DrainCurrent:ID=23A@TC=25¡æ ¡¤DrainSourceVoltage :VDSS=350V(Min) ¡¤100avalanchetested ¡¤MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation APPLICATIONS ¡¤highvoltage,highspeedpowerswitching | ISCInchange Semiconductor Company Limited ÎÞÎý¹ÌµçÎÞÎý¹Ìµç°ëµ¼Ìå¹É·ÝÓÐÏÞ¹«Ë¾ | |||
iscN-ChannelMOSFETTransistor FEATURES ¡¤DrainCurrent:ID=21A@TC=25¡æ ¡¤DrainSourceVoltage :VDSS=350V(Min) ¡¤StaticDrain-SourceOn-Resistance :RDS(on)=0.25¦¸(Max)@VGS=10V ¡¤100avalanchetested ¡¤MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ¡¤motordrive,DC- | ISCInchange Semiconductor Company Limited ÎÞÎý¹ÌµçÎÞÎý¹Ìµç°ëµ¼Ìå¹É·ÝÓÐÏÞ¹«Ë¾ | |||
Micropower,HighAccuracy Îļþ£º862.87 Kbytes Page£º20 Pages | ADAnalog Devices ÑǵÂŵÑǵÂŵ°ëµ¼Ìå¼¼ÊõÓÐÏÞ¹«Ë¾ | |||
Micropower,HighAccuracy Îļþ£º862.87 Kbytes Page£º20 Pages | ADAnalog Devices ÑǵÂŵÑǵÂŵ°ëµ¼Ìå¼¼ÊõÓÐÏÞ¹«Ë¾ |
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