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STB1188

PNPSiliconTransistor

Description ?Mediumpoweramplifier Features ?PC(Collectordissipation)=2W(Ceramicsubstateof40¡Á40¡Á0.8mmused) ?Lowcollectorsaturationvoltage:VCE(sat)=-0.5V(Typ.) ?ComplementarypairwithSTD1766

AUK

AUK corp

AUK
STB1188

PNPSiliconTransistor

Description ?Mediumpoweramplifier Features ?PC(Collectorpowerdissipation)=1W (Ceramicsubstrateof250?¡Á0.8tused) ?Lowcollectorsaturationvoltage:VCE(sat)=-0.5V(Typ.) ?ComplementarypairwithSTD1766

KODENSHIKODENSHI_AUK CORP.

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KODENSHI
STB1188

PNPSiliconTransistor

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KODENSHIKODENSHI_AUK CORP.

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KODENSHI

20WAUDIOPOWERAMPLIFIER

description The¦ÌPC1188HismonolithicintegratedcircuitandapoweramplifierdesignedforHi-Fiaudiosetsandina10pinSingleIn-Lineplasticpackage.¦ÌPC1188Hcanprovide20W(TYP.)to8ohmsat1T.H.D.and¡À22VSupplyvoltage. FEATURES ¡ñHighoutputpower. 20WTYP.(VCC=¡À22

NECRenesas Electronics America

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NEC

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. RoHScompliant.

CET-MOSCET-MOS Technology Corp.

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CET-MOS

OpticalSplitter

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EMCORE

Emcore Corporation

EMCORE

UltraHighSensitivityHallEffectLatch

Îļþ£º1.19396 Mbytes Page£º4 Pages

MATMaster Analog Technology CO.

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MAT

8ChannelCapacitiveTouchSensorwith8LEDDrivers

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MicrochipMicrochip Technology

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Microchip

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