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1Megabit(128Kx8-Bit)EEPROM DESCRIPTION: MaxwellTechnologies¡¯28C010Thigh-density1Megabit(128Kx8-Bit)EEPROMmicrocircuitfeaturesagreaterthan100krad(Si)totaldosetolerance,dependinguponspacemission.The28C010Tiscapableofin-systemelectricalbyteandpageprogrammability.Ithasa128-bytepageprogra | Maxwell Maxwell Technologies | |||
128Kx8EEPROMEEPROMMemory5Volt,ByteAlterable GENERALDESCRIPTION TheAustinSemiconductor,Inc.AS28C010isa1MegabitCMOSElectricallyErasableProgrammableReadOnlyMemory(EEPROM)organizedas131,072x8bits.TheAS28C010iscapableofinsystemelectricalByteandPagereprogrammability. FEATURES ?Accessspeed:120,150,200,a | AUSTIN Austin Semiconductor | |||
HardwareDataProtection GENERALDESCRIPTION TheAS28C010isa1MegabitCMOSElectricallyErasableProgrammableReadOnlyMemory(EEPROM)organizedas131,072x8bits.TheAS28C010iscapableofinsystemelectricalByteandPagereprogrammability. FEATURES ?Accessspeed:120,150,200,and250ns ?DataRetention: | MICROSS Micross Components | |||
1Megabit128Kx8PagedCMOSE2PROM TheAT28C010isahigh-performanceelectrically-erasableandprogrammablereadonlymemory.Its1megabitofmemoryisorganizedas131,072wordsby8bits.ManufacturedwithAtmel¡¯sadvancednonvolatileCMOStechnology,thedeviceoffersaccesstimesto120nswithpowerdissipationofjust220m | AtmelAtmel Corporation °®ÌØ÷¶û°®ÌØ÷¶û¹«Ë¾ | |||
1-megabit(128Kx8)PagedParallelEEPROM Îļþ£º410.38 Kbytes Page£º17 Pages | AtmelAtmel Corporation °®ÌØ÷¶û°®ÌØ÷¶û¹«Ë¾ |
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