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Build in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier

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Features

? Build in Biasing Circuit; To reduce using parts cost & PC board space.

? Low noise; NF = 1.8 dB typ. at f = 900 MHz

? High gain; PG = 22 dB typ. at f = 900 MHz

? Withstanding to ESD; Build in ESD absorbing diode. Withstand up to 200V at C=200pF, Rs=0 conditions.

? Provide mini mold packages; MPAK-4(SOT-143mod)

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    Build in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier

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