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BB504C

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Build in Biasing Circuit MOS FET IC VHF&UHF RF Amplifier

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Features

? Build in Biasing Circuit; To reduce using parts cost & PC board space.

? Low noise; NF = 1.0 dB typ. at f = 200 MHz,NF =1.75 dB typ. at f =900 MHz

? High gain; PG = 30 dB typ. at f = 200 MHz, PG = 22 dB typ. at f = 900 MHz

? Withstanding to ESD;

Build in ESD absorbing diode. Withstand

up to 200 V at C = 200 pF, Rs = 0 conditions.

? Provide mini mold packages; CMPAK-4 (SOT-343mod)

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    Hitachi Semiconductor

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    Build in Biasing Circuit MOS FET IC VHF&UHF RF Amplifier

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  • 300UR020A
  • 300UR040A
  • 300UR20A
  • 302U30A
  • 302UR020A
  • 302UR040A
  • 30KP58
  • 30KP70CA
  • 30KP78
  • 30KP78A
  • ACS750LCA-050
  • AD8370ARE
  • AD8370-EVAL
  • AME8833AEEV250L
  • AME8833BEIV180L
  • AME8834BEEV200L
  • AP1608
  • CL9013
  • CY2DP814ZIT
  • DTSG-62Y-S-V
  • MLL1N966B-1
  • MLL1N972B-1
  • MLL1N974C-1
  • TGL41-150
  • TGL41-170A
  • TGL41-33A
  • TGL41-39A
  • ZL50117GAG
  • ZL50118

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